Athlete FA Corporation

Athlete FA Corporation provides variety of factory automation system such as semiconductor assembly equipment.


2970-1 Shiga, Suwa City, Nagano 392-0012, Japan
TEL:0266-53-3369 FAX:0266-58-1755


Business Lines

Factory automation engineering Development, design, manufacture, and marketing of high-precision mounting and assembly systems for fields such as office equipment, semiconductors, electronic parts, automobiles, and communications equipment Design, manufacture, and marketing of automation equipment.


Semicon China 2018


Athlete FA Corporation Japanese Site


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HOME»  TOP»  Solar cell production experimental system

Solar cell production experimental system

RF magnetron sputtering system with LL chamber(For R&D purpose)


Target components
System configurationFilm-forming chamber
Sputtering methodUpper & lower sputter
Sputtering sourceφ3in×4(exchanging method)
Substrate sizeMAX □65.5mm(2.5in)
Accession vacuumLess than 7.0×10E-5[Pa]
Exhaust time10minで4.0×10-4[Pa]
Exhaust operation methodAuto(Full-auto)/Manual
Sputter operation methodAuto(Full-auto)/Manual
Exhaust systemTurbo-molecular pump
RF power source500[W]
Substrate heating temperatureMAX 300[℃]



  1. 1.Efficient sputtering with RF magnetron method.
  2. 2.Multilayer file by Auto and possible to film-form in room temperature to 300℃
  3. 3.Constant clean film-forming chamber with load lock chamber.
  4. 4.Possible for sputtering by magnetic and nonmagnetic (Depending on condition)
  5. 5.Able to confirm condition by operation panel.
  6. 6.Proper for R & D due to low cost by simple structure.





■RF magnetron sputtering equipment with gas reaction chamber.

Sputtering chamber and reaction chamber are separated, and there is no contact with reactivity gas during film-forming. It is able to keep clean environment.
It is an equipment for experiment to film-form chemical compound type solar cell by both auto and manual operation.

Co-development with Hashimoto, Myo laboratory at Shinshu university,
Department of Electrical and Electronic Engineering.



Target components
System configurationSputtering chamber + Gas reaction chamber
Accession vacuumLess than 6.0×10E-5[Pa]
Exhaust time4.0×10-4[Pa] / 10 min
Exhaust operation methodManual / Auto
Exhaust systemTurbo-molecular pump
Substrate heating temperatureMAX 800[℃]
Gas heating temperatureMAX 1000[℃]
Vaporizing temperatureMAX 400[℃]
Needle valve operation methodManual / Auto
Needle heating temperatureMAX 200[℃]



  1. 1.Possible to heat up gas supply part up to 1000℃
  2. 2.Possible for gas reaction with other element by depending on specification